Si Front End Processing Physics and Technology II of Dopant-Defect Interactions II: Volume 610 by M. Kase

Page Updated:
Book Views: 4

Author
M. Kase
Publisher
Cambridge University Press
Date of release
Pages
440
ISBN
9781558995185
Binding
Hardcover
Illustrations
Format
PDF, EPUB, MOBI, TXT, DOC
Rating
4
39

Advertising

Get eBOOK
Si Front End Processing Physics and Technology II of Dopant-Defect Interactions II: Volume 610

Find and Download Book

Click one of share button to proceed download:
Choose server for download:
Download
Get It!
File size:12 mb
Estimated time:1 min
If not downloading or you getting an error:
  • Try another server.
  • Try to reload page — press F5 on keyboard.
  • Clear browser cache.
  • Clear browser cookies.
  • Try other browser.
  • If you still getting an error — please contact us and we will fix this error ASAP.
Sorry for inconvenience!
For authors or copyright holders
Amazon Affiliate

Go to Removal form

Leave a comment

Book review

This book, first published in 2001, focuses on the formation of electrical junctions in the front-end processing of devices sized for the approaching end-of-the-roadmap. To address these issues researchers come together to share results and physical models that describe phenomena which control the three-dimensional dopant profile. Highlights focus on future issues in device scaling and how they can be quantitatively linked with the requirements placed on dopant profile and junction formation. Emphasis is on shallow junction depth and high-concentration activation as well as the extremely tight limits on junction abruptness. An excellent overview of the field of implant and annealing in silicon devices is also provided. Topics include: the challenges of device scaling; 2-D dopant characterization; Si front-end processing; ion implantation and shallow junction technology; group III dopant diffusion and activation; carbon diffusion and interaction with point defects; group V diffusion and activation; vacancy-type defects - interaction and characterization; regrown amorphous layers and structure and properties of point and extended defects.


Readers reviews